Nexperia Launches High-efficiency GaN FET with Industry-leading Perfor…

Nexperia, the expert in discrete and MOSFET components and analog & logic ICs, today announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA, a very robust device with a gate-source voltage (VGS) of +/- 20 V and a temperature range of -55 to +175 °C. The GAN063-650WSA features a low RDS(on) - down to 60 mΩ - and fast switching to offer very high efficiency. Nexperia is targeting high performance application segments including xEV, d...